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Package Level Reliability
Chiron Solutions for competitive pricing yet non comprising on measurement resolution and accuracy
•SPC 8000
•Capabilities:
Copper Electromigration Test (EM) and Thin Dielectrics Time Dependent Dielectric Breakdown Test (TDDB)
•Description:

The SPC8000 is a high temperature (350 °C), large lot, fully integrated package level reliability evaluation system for electromigration (EM) and time dependent dieletric breakdown (TDDB) testing. This highly reliable, most stable and user friendly system is all you need for testing, data collection, data analysis and report generation to assure the integrity of your process

•SPC 8010
•Capabilities:
Copper Electromigration Test (EM) and Thin Dielectrics Time Dependent Dielectric Breakdown Test (TDDB)
•Description:
The SPC8010 is a high temperature (400 °C), compact and small volume test system. It allow you to test, gather data, analyze data and generate reports to assure the integrity of your process. The SPC8010 system is the most reliable and most stable test system available for package level electromigration (EM) and time dependent dielectric breakdown (TDDB) testing. All measurement elements are included as intergal components

Alternative solutions for high end measurement resolution and accuracy.
•XACT 810
•Capabilities:

Electromigration Test (EM)

•Description: The XACT-810 test system is a high performance EM system for evaluating the quality and reliability of all types of interconnects in semiconductor products under temperature and current stress. This system is an in-situ test system, where the resistance change is monitored continously with a high measurement resolution
•XACT 830
•Capabilities: Hot Carrier Degradation/Negative Bias Temperature Instability (HCI/NBTI) Test System
•Description: The XACT-830 test system is a high performance HCI/NBTI system for evaluating the quality and reliability of all types of transistors in semiconductor products under either temperature and/or voltages stress. This system is an in-situ test system, where the change in the transistor characteristic parameters is monitored continously with a high measurement resolution

電遷移效應可靠性測試機(Chiron, EM, TDDB, HCI, NBTI),氧化層閘極可靠性測試機,熱載流子注入效應可靠性測試機(Hot carrier, MIC, MICRO INSTERUMENT)
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